K815P, k825p, k845p www.vishay.com vishay semiconductors rev. 2.1, 24-sep-12 1 document number: 83524 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, photodarlington output description in the K815P, k825p, k845p parts, each channel consist of a photodarlington optically co upled to a gallium arsenide infrared-emitting diode in an 4 pin, 8 pin, and 16 pin plastic dual inline package. the elements are mounted on one leadframe providing a fixed distance between input an d output for highest safety requirements. features ? endstackable to 2.54 mm (0.1") spacing ? isolation test voltage 5300 v rms ? low temperature coefficient of ctr ? wide ambient temperature range ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? programmable logic controllers ?modems ? answering machines ? general applications agency approvals ? ul1577, file no. e76222 system code c, double protection ? csa 22.2 bulletin 5a, double protection ? cqc: gb8898-2001 (K815P only) a 1 c a c 4 pin 8 pin 16 pin 1 ordering information k8#5p part number agency certified/package ctr (%) ul, cul > 600 dip-4 (cqc) K815P dip-8 k825p dip-16 k845p absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissipation p diss 100 mw junction temperature t j 125 c 7.62 mm dip-4/dip-8/dip-16
K815P, k825p, k845p www.vishay.com vishay semiconductors rev. 2.1, 24-sep-12 2 document number: 83524 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to wave profile for soldering conditions for thro ugh hole devices. note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. output collector emitter voltage v ceo 35 v emitter collector voltage v eco 7v collector current i c 80 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c coupler ac isolation test voltage (rms) t = 1 min, f = 50 hz v iso 5kv total power dissipation p tot 250 mw operating ambient temperature t amb - 40 to + 100 c storage temperature range t stg - 55 to + 125 c soldering temperature (1) t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 20 ma v f 1.2 1.4 v reverse current v r = 6 v i r 10 a output collector emitter voltage i c = 100 a v ceo 35 v emitter collector voltage i e = 100 a v ceo 7v collector dark current v ce = 10 v, i f = 0 a, e = 0 i ceo 100 na coupler collector emitter sa turation voltage i c = 5 ma, i f = 20 ma v cesat 0.1 v cut-off frequency i f = 10 ma, v ce = 5 v, r l = 100 f c 10 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio parameter test condition symbol min. typ. max. unit i c /i f i f = 1 ma, v ce = 2 v ctr 600 800 % switching characteristics parameter test condition symbol min. typ. max. unit rise time v ce = 2 v, i c = 10 ma, r l = 100 (see figure 1) t r 300 s turn-off time v ce = 2 v, i c = 10 ma, r l = 100 (see figure 1) t off 250 s absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit
K815P, k825p, k845p www.vishay.com vishay semiconductors rev. 2.1, 24-sep-12 3 document number: 83524 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - test circuit, non-saturate d operation fig. 2 - switching times typical characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward voltage vs. ambient temperature fig. 4 - forward current vs. forward voltage fig. 5 - relative current transf er ratio vs. ambient temperature fig. 6 - collector dark current vs. ambient temperature r l 50 channel ii channel i i c = 10 ma + v cc i f i f 0 r g = 50 t p t p = 50 s t = 0.01 oscilloscope r i = 1 m c i = 20 pf 14779 t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time 96 11698 0.8 0.9 1.0 1.1 1.2 1.3 0 20406080100 t amb - ambient temperature (c) 14389 v - forward voltage (v) f i f = 10 ma 0.1 1 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 v f - forward voltage (v) 14390 f i - forward current (ma) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 t amb - ambient temperature (c) 14391 ctr - relative current transfer ratio rel v ce = 5 v i f = 1 ma 1 10 100 1000 10 000 100 000 20 30 40 50 60 70 80 90 100 t amb - ambient temperature (c) 14392 i - collector dark current, ceo with open base (na) v ce = 10 v i f = 0
K815P, k825p, k845p www.vishay.com vishay semiconductors rev. 2.1, 24-sep-12 4 document number: 83524 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - collector current vs. forward current fig. 8 - collector current vs. collector em itter voltage fig. 9 - collector emitter satura tion voltage vs. collector current fig. 10 - current transfer ratio vs. forward current package dimensions in inches (millimeters) 0.1 1 10 100 1000 0.1 1 10 100 i f - forward current (ma) 14393 v ce = 2 v i - collector current (ma) c 0.1 1 10 100 0.1 1 10 100 v ce - collector emitter voltage (v) 14394 i - collector current (ma) c 1 ma 0.5 ma 0.2 ma 0.1 ma i f = 2 ma 0.6 0.7 0.8 0.9 1.0 1.1 110100 i c - collector current (ma) 14395 v - collector emitter saturation voltage (v) cesat ctr = 200 % used 25 % 50 % 100 % 10 100 1000 10 000 0.1 1 10 100 i f - forward current (ma) 14396 v ce = 2 v ctr - current transfer ratio (%) i178029-2 0.508 1.020 0.25 typ. 10 3 to 7 9.52 10.03 7.52 7.90 8 min. lead coplanarity 0.004 max. 6.48 6.81 3 4 4.55 4.83 0.76 1.14 4 typ. 2.54 typ. 3.30 3.81 0.249 0.102 0.79 typ. 1.27 typ. smd iso method a 2.54 r 0.25 1.78 0.76 8 min. 1.52 11.05 pin 1 identification
K815P, k825p, k845p www.vishay.com vishay semiconductors rev. 2.1, 24-sep-12 5 document number: 83524 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package marking i178006 pin one id 6.645 0.165 9.77 0.14 0.95 0.19 4 typ. 2.54 typ. 0.51 0.05 3.555 0.255 0.70 0.19 10 3 to 9 7.62 typ. 0.25 0.05 3.045 0.255 6.095 0.255 4 3 2 1 0.79 1.27 5 6 7 8 isomethoda i178007 6.48 6.81 19.77 20.07 0.76 1.14 4 2.54 typ. 10 typ. 3 to 9 0.46 0.56 0.20 0.30 2.79 3.30 pin one id 3.30 3.81 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 7.62 typ. 5.84 6.35 1.27 iso method a 0.51 0.89 0.79 K815P v yww h 68 k845p v yww h 68 k825p v yww h 68
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